[기초반도체공정

A typical STI process sequence includes the following process steps: pad oxide oxidation, LPCVD nitride deposition, trench lithography, trench etch, resist ...

This paper reviews the requirements and challenges in designing a Shallow Trench Isolation (STI) process flow for 0.1 /spl mu/m CMOS technologies.

In this process, the N2O gas flow rate is maintained at 4.8 l/min, while the flow rate of. TEOS gas and low/high-frequency power ratio are both varied to ...

The present invention proposes a method for fabricating shallow trench regions for isolation. A masking oxide layer is patterning on a semiconductor ...

For electrical operation of the transistor, shallow trench isolation thermal stress primarily impacts the flow of carriers (electrons and/or ...

A high density plasma procedure is used for deposition of silicon oxide, filling the shallow trench shape which is lined with the group of thin insulator liner ...

For the isolation of neighboring MOS transistors there exist two techniques, namely Local Oxidation of Silicon and Shallow Trench Isolation.

The process flow starts with the growth of a buffer of silicon dioxide (SiO2) and deposition of silicon nitride (Si3N4). This step, shown in Fig. 3(a), is ...